AT49SV163D-80CU

AT49SV163D-80CU Datasheet


AT49SV163D AT49SV163DT

Part Datasheet
AT49SV163D-80CU AT49SV163D-80CU AT49SV163D-80CU (pdf)
Related Parts Information
AT49SV163D-80TU AT49SV163D-80TU AT49SV163D-80TU
AT49SV163DT-80TU AT49SV163DT-80TU AT49SV163DT-80TU
AT49SV163DT-80CU AT49SV163DT-80CU AT49SV163DT-80CU
PDF Datasheet Preview
• Single Voltage Read/Write Operation 1.65V to 1.95V
• Access Time 80 ns
• Sector Erase Architecture

Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout Eight 4K Word 8K Bytes Sectors with Individual Write Lockout
• Fast Word Program Time 10 µs
• Fast Sector Erase Time 100 ms
• Suspend/Resume Feature for Erase and Program Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector Supports Reading Any Word in the Non-suspending Sectors by Suspending

Programming of Any Other Word
• Low-power Operation
10 mA Active 15 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program Operation
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface CFI
16-megabit 1M x 16 1.8-volt Only Flash Memory

AT49SV163D AT49SV163DT

The AT49SV163D T is a 1.8-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector see “Sector Lockdown” on page

To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The end of a program or an erase cycle is detected by the READY/BUSY pin, Data Polling or by the toggle bit.

The VPP pin provides data protection. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 1.65V or above, normal program and erase operations can be performed. With VPP at 10.0V, the program Dual-word Program command operation is accelerated.

A six-byte command Enter Single Pulse Program Mode sequence to remove the requirement of entering the three-byte program sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode Single Pulse Word Program is exited by powering down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing it back to VCC. Erase, Erase Suspend/Resume and Program Suspend/Resume commands will not work while in this mode if entered they will result in data being programmed into the device. It is not recommended that the six-byte code reside in the software of the final product but only exist in external programming code.

Pin Configurations

Pin Name A0 - A19 CE OE WE RESET RDY/BUSY VPP I/O0 - I/O15 NC

Function Addresses Chip Enable Output Enable Write Enable Reset READY/BUSY Output Write Protection Data Inputs/Outputs No Connect

TSOP Top View Type 1

A15 1 A14 2 A13 3 A12 4 A11 5 A10 6

A9 7 A8 8 A19 9 NC 10 WE 11 RESET 12 NC 13 VPP 14 RDY/BUSY 15 A18 16 A17 17 A7 18 A6 19 A5 20 A4 21 A3 22 A2 23 A1 24
48 A16 47 VCC 46 GND 45 I/O15 44 I/O7 43 I/O14 42 I/O6 41 I/O13 40 I/O5 39 I/O12 38 I/O4 37 VCC 36 I/O11 35 I/O3 34 I/O10 33 I/O2 32 I/O9 31 I/O1 30 I/O8 29 I/O0 28 OE 27 GND 26 CE 25 A0

CBGA Top View Ball Down
123456

A3 A7 RDY/BUSY WE A9 A13

A4 A17 VPP RST A8 A12

A2 A6 A18 NC A10 A14

A1 A5

NC A19 A11 A15

A0 I/O0 I/O2 I/O5 I/O7 A16

CE I/O8 I/O10 I/O12 I/O14 NC

OE I/O9 I/O11 VCC I/O13 I/015

VSS I/O1 I/O3 I/O4 I/O6 VSS
2 AT49SV163D T

Block Diagram

I/O0 - I/O15

AT49SV163D T

OUTPUT BUFFER

INPUT BUFFER

A0 - A19

INPUT BUFFER

ADDRESS LATCH

Y-DECODER X-DECODER
Ordering Information

Green Package Pb/Halide-free
tACC

ICC mA

Active

Standby
Ordering Code

AT49SV163D-80CU AT49SV163D-80TU

AT49SV163DT-80CU AT49SV163DT-80TU

Package
48C17 48T
48C17 48T

Operation Range Industrial
-40° to 85° C Industrial
-40° to 85° C
48C17 48T

Package Type 48-ball, Plastic Chip-Size Ball Grid Array Package CBGA 48-lead, Plastic Thin Small Outline Package TSOP
26 AT49SV163D T

Packaging Information
48C17 CBGA

AT49SV163D T

A1 Ball ID

A B C D E F G H

Top View

A1 Ball Corner
6 54321

Bottom View

Side View

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL E E1 D D1 A A1 e Øb

NOM MAX

NOTE

TITLE 2325 Orchard Parkway 48C17, 48-ball 6 x 8 Array , mm Pitch, R San Jose, CA 95131 x mm Chip-scale Ball Grid Array Package CBGA
10/26/05
48C17
48T TSOP

PIN 1
0º ~ 8º c

Pin 1 Identifier

SEATING PLANE

GAGE PLANE

This package conforms to JEDEC reference MO-142, Variation DD. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum.

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL A A1 A2 D D1 E L L1 b c e

MIN NOM MAX

BASIC
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Datasheet ID: AT49SV163D-80CU 518713