FDS4070N3

FDS4070N3 Datasheet

FDS4070N3

Part	Datasheet
FDS4070N3	FDS4070N3 (pdf)

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FDS4070N3 February 2004 FDS4070N3 40V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package. • Synchronous rectifier • DC/DC converter • A, 40 V. RDS ON = VGS = 10 V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching, low gate charge • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Maximum Power Dissipation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4070N3 FDS4070N3 13’’ Ratings 40 ± 20 60 to +150 Tape width 12mm Units W °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDS4070N3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=15.3A Drain-Source Avalanche Current 310 mJ Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V V mV/°C IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2

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FDS4070N3

February 2004

FDS4070N3
40V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS ON in a small package.
• Synchronous rectifier
• DC/DC converter
• A, 40 V. RDS ON = VGS = 10 V
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability
• Fast switching, low gate charge
• FLMP SO-8 package Enhanced thermal
performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Maximum Power Dissipation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS4070N3

FDS4070N3
13’’

Ratings
40 ± 20 60 to +150

Tape width 12mm

Units

W °C
°C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDS4070N3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy

Single Pulse, VDD=40V, ID=15.3A

Drain-Source Avalanche Current
310 mJ

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 32 V, VGS = 0 V

V mV/°C

IGSSF

Leakage, Forward

VGS = 20 V, VDS = 0 V

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

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Datasheet ID: FDS4070N3 514302