FQI4P40TU

FQI4P40TU Datasheet

FQB4P40 / FQI4P40

Part	Datasheet
FQI4P40TU	FQI4P40TU (pdf)

Related Parts	Information
FQB4P40TM	FQB4P40TM

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FQB4P40 / FQI4P40 FQB4P40 / FQI4P40 400V P-Channel MOSFET August 2000 QFETTM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. • -3.5A, -400V, RDS on = = -10 V • Low gate charge typical 18 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2000 Fairchild Semiconductor International ● ●

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FQB4P40 / FQI4P40

FQB4P40 / FQI4P40
400V P-Channel MOSFET

August 2000

QFETTM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
• -3.5A, -400V, RDS on = = -10 V
• Low gate charge typical 18 nC
• Low Crss typical 11 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
2000 Fairchild Semiconductor International
● ●

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Datasheet ID: FQI4P40TU 515168