2N3704

2N3704 Datasheet


2N3704

Part Datasheet
2N3704 2N3704 2N3704 (pdf)
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2N3704
2N3704

NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA.
• Sourced from Process
• See PN100 for characteristics.

NPN Epitaxial Silicon Transistor

TO-92

Emitter Collector Base

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TST

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Value 30 50 500
-55 ~ +150

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

BV BR CEO Collector-Emitter Breakdown Voltage

BV BR CBO Collector-Base Breakdown Voltage

BV BR EBO Emitter-Base Breakdown Voltage

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

On Characteristics *

IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 20V, IE = 0 VEB = 3.0V, IC = 0

DC Current Gain

VCE sat Collector-Emitter Saturation Voltage

VBE on
More datasheets: HCPL2530SD | 3374 | 1099 | 43-01206 | 43-01207 | 43-01205 | 2N3704_D26Z | 2N3704_D27Z | 2N3704_D75Z | 2N3704_D74Z


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Datasheet ID: 2N3704 512666