2N3704_D26Z
2N3704_D26Z Datasheet
2N3704
| Part | Datasheet |
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2N3704_D26Z |
2N3704_D26Z (pdf) |
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2N3704 |
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| PDF Datasheet Preview |
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| 2N3704 2N3704 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process • See PN100 for characteristics. NPN Epitaxial Silicon Transistor TO-92 Emitter Collector Base Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TST Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Value 30 50 500 -55 ~ +150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO Collector-Emitter Breakdown Voltage BV BR CBO Collector-Base Breakdown Voltage BV BR EBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current On Characteristics * IC = 10mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCB = 20V, IE = 0 VEB = 3.0V, IC = 0 DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE on |
| More datasheets: 6N136WV | 6N136V | HCPL2530S | HCPL2530 | HCPL2530SD | 3374 | 1099 | 43-01206 | 43-01207 | 43-01205 |
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