FQA11N90C
Part | Datasheet |
---|---|
![]() |
FQA11N90C (pdf) |
PDF Datasheet Preview |
---|
FQA11N90C FQA11N90C 900V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. • 11A, 900V, RDS on = = 10 V • Low gate charge typical 60 nC • Low Crss typical 23 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3P FQA Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQA11N90C 900 ± 30 960 30 300 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation FQA11N90C Electrical Characteristics |
More datasheets: ADM1022ARQ-REEL7 | ADM1022ARQZ | ADM1022ARQZ-REEL | MB3793-45PF-GTBNDK5ER6E1 | DM74LS165N | HLMP-HD57-NR000 | HLMP-HD57-NR0ZZ | TQW14A-48S12RJ | TQW14A-48S12-R | WM8783GED/RV |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQA11N90C Datasheet file may be downloaded here without warranties.