FJN13003BU
FJN13003BU Datasheet
FJN13003
| Part | Datasheet |
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FJN13003BU |
FJN13003BU (pdf) |
| Related Parts | Information |
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FJN13003TA |
FJN13003TA |
| PDF Datasheet Preview |
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| FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W TO-92 Emitter Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current DC *Collector Current Pulse Base Current DC *Base Current Pulse Collector Power Dissipation Ta=25°C Junction Temperature TSTG Storage Temperature * Pulse Test Pulse Width=5ms, Duty Cycle < 10% Value 700 400 9 3 150 - 65 ~ 150 Units V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO IEBO hFE VCE sat VBE sat fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=10V, IC=0.1A VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = Min. 700 400 Typ. Max. |
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