FDD26AN06A0
FDD26AN06A0 Datasheet
FDD26AN06A0
| Part | Datasheet |
|---|---|
FDD26AN06A0 |
FDD26AN06A0 (pdf) |
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| FDD26AN06A0 August 2004 FDD26AN06A0 N-Channel MOSFET 60V, 36A, • rDS ON = Typ. , VGS = 10V, ID = 36A • Qg tot = 13nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 Formerly developmental type 82544 • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN FLANGE GATE SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, = 52oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 60 ±20 36 25 7 Figure 4 35 75 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2004 Fairchild Semiconductor Corporation FDD26AN06A0 Package Marking and Ordering Information Device Marking FDD26AN06A0 Device FDD26AN06A0 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 36A, VGS = 10V ID = 36A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 36A Ig = 1.0mA Switching Characteristics VGS = 10V tON td ON Turn-On Time Turn-On Delay Time Rise Time td OFF Turn-Off Delay Time Fall Time tOFF |
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