BSR50_D74Z

BSR50_D74Z Datasheet

BSR50

Part	Datasheet
BSR50_D74Z	BSR50_D74Z (pdf)

Related Parts	Information
BSR50_J35Z	BSR50_J35Z
BSR50	BSR50

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BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process TO-92 Emitter Collector Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter VCEO VCBO VEBO IC TJ, TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 -55 ~ 150 Units V A °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition BVCEO BVCBO BVEBO ICBO IEBO hFE VCE sat VBE sat Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10mA, IB = 0 IC = 100µA, IB = 0 IE = 100µA, IC = 0 VCB = 45V, IE = 0 VEB = 4.0V, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA Min. 45 60 5 Typ. 1,000 2,000 Max. Units V nA Thermal Characteristics TA=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 200 Units mW/°C °C/W °C/W 2002 Fairchild Semiconductor Corporation

PDF Datasheet Preview

BSR50

BSR50

NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector currents to 0.5A.
• Sourced from Process

TO-92

Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

VCEO VCBO VEBO IC TJ, TSTG

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature

Ratings 45 60 5
-55 ~ 150

Units V A °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

BVCEO BVCBO BVEBO ICBO IEBO hFE

VCE sat

VBE sat

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 10mA, IB = 0 IC = 100µA, IB = 0 IE = 100µA, IC = 0

VCB = 45V, IE = 0

VEB = 4.0V, IC = 0

VCE = 10V, IC = 150mA VCE = 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA

Min. 45 60 5

Typ.
1,000 2,000

Max.

Units V nA

Thermal Characteristics TA=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max. 625 200

Units mW/°C °C/W °C/W
2002 Fairchild Semiconductor Corporation

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Datasheet ID: BSR50_D74Z 513534