BSR50_D74Z

BSR50_D74Z Datasheet


BSR50

Part Datasheet
BSR50_D74Z BSR50_D74Z BSR50_D74Z (pdf)
Related Parts Information
BSR50_J35Z BSR50_J35Z BSR50_J35Z
BSR50 BSR50 BSR50
PDF Datasheet Preview
BSR50

BSR50

NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector currents to 0.5A.
• Sourced from Process

TO-92

Emitter Collector Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

VCEO VCBO VEBO IC TJ, TSTG

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature

Ratings 45 60 5
-55 ~ 150

Units V A °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

BVCEO BVCBO BVEBO ICBO IEBO hFE

VCE sat

VBE sat

Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 10mA, IB = 0 IC = 100µA, IB = 0 IE = 100µA, IC = 0

VCB = 45V, IE = 0

VEB = 4.0V, IC = 0

VCE = 10V, IC = 150mA VCE = 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA

Min. 45 60 5

Typ.
1,000 2,000

Max.

Units V nA

Thermal Characteristics TA=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max. 625 200

Units mW/°C °C/W °C/W
2002 Fairchild Semiconductor Corporation
More datasheets: DZT658-13 | BCM84848A1KFSBG | FQPF9N15 | DFR0329 | CY8C24033-24PVXI | FDD26AN06A0 | DM74LS05N | B39431R715U310 | 4314S | BSR50_J35Z


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSR50_D74Z Datasheet file may be downloaded here without warranties.

Datasheet ID: BSR50_D74Z 513534