FGA70N30TDTU
FGA70N30TDTU Datasheet
FGA70N30TD 300V, 70A PDP Trench IGBT
| Part | Datasheet |
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FGA70N30TDTU |
FGA70N30TDTU (pdf) |
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| FGA70N30TD 300V, 70A PDP Trench IGBT FGA70N30TD 300V, 70A PDP IGBT • High current capability • Low saturation voltage VCE sat =1.5V IC = 40A • High input impedance • Fast switching • RoHS complaint Application PDP System December 2007 Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. TO-3P Absolute Maximum Ratings VCES VGES IC pulse 1 * IF IFM TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation TC = 25oC TC = 100°C TC = 25oC TC = 100oC Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj Ratings 300 ±30 160 10 40 201 -55 to +150 -55 to +150 Typ. ---- Max. 2006 Fairchild Semiconductor Corporation Units V A W oC Units oC/W oC/W oC/W FGA70N30TD 300V, 70A PDP Trench IGBT Package Marking and Ordering Information Device Marking Device FGA70N30TD FGA70N30TDTU Package TO-3P Packaging Type Tube Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =20A, VGE = 15V IC =40A, VGE = 15V IC =70A, VGE = 15V TC = 25oC IC = 70A, VGE = 15V TC = 125oC Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200V, IC = 40A RG = VGE = 15V Resistive Load, TC = 25oC VCC = 200V, IC = 40A RG = VGE = 15V Resistive Load, TC = 125oC VCE = 200V, IC = 40A VGE = 15V Qty per Tube 30ea Max Qty per Box Min. Typ. Max. Units V/oC |
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