FQPF13N50C_F105

FQPF13N50C_F105 Datasheet

FQP13N50C / FQPF13N50C N-Channel MOSFET

Part	Datasheet
FQPF13N50C_F105	FQPF13N50C_F105 (pdf)

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FQP13N50C_F105	FQP13N50C_F105

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FQP13N50C / FQPF13N50C N-Channel MOSFET FQP13N50C / FQPF13N50C N-Channel MOSFET 500 V, 13 A, 480 November 2013 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 13 A, 500 V, RDS on = 480 mΩ Max. VGS = 10 V, ID = A • Low Gate Charge Typ. 43 nC • Low Crss Typ. 20 pF • 100% Avalanche Tested TO-220 TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature FQP13N50C FQPF13N50C ± 30 -55 to +150 Thermal Characteristics Package Marking and Ordering Information Part Number FQP13N50C_F105 FQPF13N50C_F105 Top Mark FQP13N50C FQPF13N50C Package TO-220 TO-220F Packing Method Tube Reel Size N/A N/A Tape Width N/A N/A Quantity 50 units 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- Breakdown Voltage Temperature / Coefficient ID = 250 µA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR 1 10 100 -100 V/°C µA µA nA On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss VDS = 25 V, VGS = 0 V, f = MHz -- 1580 2055 pF PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: Semiconductor Components Industries, LLC N. American Technical Support 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support Phone 421 33 790 2910 Japan Customer Focus Center Phone 81−3−5817−1050 ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

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FQP13N50C / FQPF13N50C N-Channel MOSFET

FQP13N50C / FQPF13N50C

N-Channel MOSFET
500 V, 13 A, 480

November 2013

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 13 A, 500 V, RDS on = 480 mΩ Max. VGS = 10 V, ID = A
• Low Gate Charge Typ. 43 nC
• Low Crss Typ. 20 pF
• 100% Avalanche Tested

TO-220

TO-220F

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

FQP13N50C FQPF13N50C
± 30
-55 to +150

Thermal Characteristics
Package Marking and Ordering Information

Part Number FQP13N50C_F105 FQPF13N50C_F105

Top Mark FQP13N50C FQPF13N50C

Package TO-220 TO-220F

Packing Method Tube

Reel Size N/A N/A

Tape Width N/A N/A

Quantity 50 units 50 units

Electrical Characteristics TC = 25oC unless otherwise noted.

Parameter

Test Conditions

Min Typ Max Unit

Off Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA
500 --

Breakdown Voltage Temperature / Coefficient

ID = 250 µA, Referenced to 25°C --

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V

IGSSR
1 10 100 -100

V/°C
µA µA nA

On Characteristics

VGS th Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

VDS = 25 V, VGS = 0 V, f = MHz
-- 1580 2055 pF
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email:

Semiconductor Components Industries, LLC

N. American Technical Support 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support Phone 421 33 790 2910

Japan Customer Focus Center Phone 81−3−5817−1050

ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

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Datasheet ID: FQPF13N50C_F105 515289