FDZ493P

FDZ493P Datasheet

FDZ493P P-Channel 2.5V Specified BGA MOSFET

Part	Datasheet
FDZ493P	FDZ493P (pdf)

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FDZ493P P-Channel 2.5V Specified BGA MOSFET November 2006 FDZ493P P-Channel 2.5V Specified BGA MOSFET - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Occupies only mm2 of PCB area. Less than 50% of the area of SSOT-6. - Ultra-thin package less than mm height when mounted to PCB. - Outstanding thermal transfer characteristics:4 times better than SSOT-6. - Ultra-low Qg x rDS on figure-of-merit. - RoHS Compliant. Combining Fairchild's advanced 2.5V specified process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS on . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS on . Application - Battery management - Load switch - Battery protection GATE BOTTOM MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Device Marking E Device FDZ493P Reel Size 7’’ Note 1a Note 1a Ratings ±12 to +150 Units V W °C Note 1a °C/W Tape Width 8mm Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDZ493P P-Channel 2.5V Specified BGA MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = VGS = 0V ID = referenced to 25°C VDS = VGS = 0V VGS = ±12V, VDS = 0V mV/°C ±100 nA On Characteristics note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance ID on gFS On to State Drain Current Forward Transconductance VGS = VDS, ID = ID = referenced to 25°C mV/°C VGS = ID = VGS = ID =

PDF Datasheet Preview

FDZ493P P-Channel 2.5V Specified BGA MOSFET

November 2006

FDZ493P

P-Channel 2.5V Specified BGA MOSFET
- Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Occupies only mm2 of PCB area. Less than 50% of the
area of SSOT-6.
- Ultra-thin package less than mm height when mounted to PCB.
- Outstanding thermal transfer characteristics:4 times better than SSOT-6.
- Ultra-low Qg x rDS on figure-of-merit. - RoHS Compliant.

Combining Fairchild's advanced 2.5V specified process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS on . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS on .

Application
- Battery management - Load switch - Battery protection

GATE

BOTTOM

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous -Pulsed

TA = 25°C

Power Dissipation

TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Device Marking E

Device FDZ493P

Reel Size 7’’

Note 1a Note 1a

Ratings ±12
to +150

Units V

W °C

Note 1a
°C/W

Tape Width 8mm

Quantity 3000 units
2006 Fairchild Semiconductor Corporation

FDZ493P P-Channel 2.5V Specified BGA MOSFET

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = VGS = 0V ID = referenced to 25°C

VDS = VGS = 0V VGS = ±12V, VDS = 0V
mV/°C
±100 nA

On Characteristics note 2

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On Resistance

ID on gFS

On to State Drain Current Forward Transconductance

VGS = VDS, ID =

ID = referenced to 25°C
mV/°C

VGS = ID =

VGS = ID =

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Datasheet ID: FDZ493P 514455