FDZ204P
FDZ204P Datasheet
FDZ204P
| Part | Datasheet |
|---|---|
FDZ204P |
FDZ204P (pdf) |
| PDF Datasheet Preview |
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| FDZ204P January 2004 FDZ204P P-Channel 2.5V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ204P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection Pin 1 F204P • A, V. RDS ON = 45 VGS = V RDS ON = 75 VGS = V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Ultra-low Qg x RDS ON figure-of-merit. • High power and current handling capability. Bottom Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 204P FDZ204P 7’’ Ratings ±12 to +150 67 11 1 Tape width 8mm Units W °C °C/W °C/W °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDZ204P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature ID = µA, Referenced to 25°C mV/°C Coefficient IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSSF IGSSR VGS = V, VDS = 0 V VGS = 12 V, VDS = 0 V nA 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance VDS = VGS, ID = µA ID = µA, Referenced to 25°C |
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