DI9430
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DI9430T (pdf) |
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DI9430 SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR • High Cell Density DMOS Technology • Low On-State Resistance • High Power and Current Capability • Fast Switching Speed • High Transient Tolerance 8 765 TOP VIEW 1234 Mechanical Data • SO-8 Plastic Case • Terminal Connections See Outline Drawing and Internal Circuit Diagram above SO-8 Dim Min Max J Nominal P Nominal All Dimensions in mm Maximum Ratings 25°C unless otherwise specified Characteristic Value Unit Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±20 Drain Current Note 1a Continuous TA = 25°C Note 1a Continuous TA = 70°C Pulsed TA = 25°C ±15 Maximum Power Dissipation Note 1a Note 1b Note 1c Operating and Storage Temperature Range Tj, TSTG -55 to +150 Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Symbol RQJA RQJC Value 50 25 Unit °C/W °C/W |
More datasheets: W2K121-AA01-01 | W2K121-AA15-01 | W2K121-AB07-39 | W2K121-AB11-13 | W2K121-AA01-03 | M5312 SL001 | M5312 SL005 | M5312 SL002 | CPDT5-5V0U | HCTL-2017 |
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