DI9430T

DI9430T Datasheet


DI9430

Part Datasheet
DI9430T DI9430T DI9430T (pdf)
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DI9430

SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• High Cell Density DMOS Technology
• Low On-State Resistance
• High Power and Current Capability
• Fast Switching Speed
• High Transient Tolerance
8 765

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Mechanical Data
• SO-8 Plastic Case
• Terminal Connections See Outline Drawing
and Internal Circuit Diagram above

SO-8

Dim Min Max

J Nominal

P Nominal

All Dimensions in mm

Maximum Ratings 25°C unless otherwise specified

Characteristic

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS
±20

Drain Current

Note 1a Continuous TA = 25°C

Note 1a Continuous TA = 70°C

Pulsed TA = 25°C
±15

Maximum Power Dissipation

Note 1a

Note 1b

Note 1c

Operating and Storage Temperature Range

Tj, TSTG
-55 to +150

Thermal Characteristics

Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1

Symbol RQJA RQJC

Value 50 25

Unit °C/W °C/W
More datasheets: W2K121-AA01-01 | W2K121-AA15-01 | W2K121-AB07-39 | W2K121-AB11-13 | W2K121-AA01-03 | M5312 SL001 | M5312 SL005 | M5312 SL002 | CPDT5-5V0U | HCTL-2017


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Datasheet ID: DI9430T 509914