FDZ202P

FDZ202P Datasheet

FDZ202P

Part	Datasheet
FDZ202P	FDZ202P (pdf)

PDF Datasheet Preview
FDZ202P January 2004 FDZ202P P-Channel 2.5V Specified BGA MOSFET Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON . • Battery management • Load switch • Battery protection • A, V. RDS ON = 45 VGS = V RDS ON = 75 VGS = V • Occupies only 5 mm2 of PCB area only 55% of the area of SSOT-6 • Ultra-thin package less than mm height when mounted to PCB • Outstanding thermal transfer characteristics 4 times better than SSOT-6 • Ultra-low Qg x RDS ON figure-of-merit • High power and current handling capability F202 Pin 1 DDD SSS GSS DDD Bottom Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Steady State Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case Note 1a Note 1 Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 202P FDZ202P 7’’ Ratings ±12 2 to +150 Tape width 8mm Units W °C °C/W °C/W °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDZ202P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Forward Transconductance VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V VDS = VGS, ID = µA

PDF Datasheet Preview

FDZ202P

January 2004

FDZ202P

P-Channel 2.5V Specified BGA MOSFET

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ202P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS ON .
• Battery management
• Load switch
• Battery protection
• A, V. RDS ON = 45 VGS = V RDS ON = 75 VGS = V
• Occupies only 5 mm2 of PCB area only 55% of the area of SSOT-6
• Ultra-thin package less than mm height when mounted to PCB
• Outstanding thermal transfer characteristics 4 times better than SSOT-6
• Ultra-low Qg x RDS ON figure-of-merit
• High power and current handling capability

F202

Pin 1

DDD SSS GSS DDD

Bottom

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

PD TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1a

Pulsed

Power Dissipation Steady State

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ball

Thermal Resistance, Junction-to-Case

Note 1a Note 1 Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
202P

FDZ202P
7’’

Ratings
±12
2 to +150

Tape width 8mm

Units

W °C
°C/W °C/W °C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDZ202P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

RDS on

Static

Forward Transconductance

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = V, VGS = 12 V,

VGS = 0 V VDS = 0 V VDS = 0 V

VDS = VGS, ID = µA

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Datasheet ID: FDZ202P 514437