AON6408L
AON6408L Datasheet
AON6408
| Part | Datasheet |
|---|---|
AON6408L |
AON6408L (pdf) |
| PDF Datasheet Preview |
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| AON6408 30V N-Channel MOSFET The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. Product Summary VDS V = 30V ID = 25A RDS ON < RDS ON < VGS = 10V VGS = 10V VGS = 4.5V 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View Top View PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 25 20 130 32 51 31 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t 10s Steady-State 17 44 Max 21 53 Maximum Junction-to-Case Steady-State Units V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. |
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