FDS4953
FDS4953 Datasheet
FDS4953
| Part | Datasheet |
|---|---|
FDS4953 |
FDS4953 (pdf) |
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| FDS4953 May 2002 FDS4953 Dual 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V . • Power management • Load switch • Battery protection • A, V RDS ON = 55 VGS = V RDS ON = 95 VGS = V • Low gate charge 6nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability DD2DD1DD1 DD2 SO-8 Pin 1 SO-8 S1GG1 SS2GS2 S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b TJ, TSTG Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4953 FDS4953 13’’ 2002 Fairchild Semiconductor Corporation Ratings ±20 2 1 to +175 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS4953 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = µA Breakdown Voltage Temperature Coefficient ID = µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V IGSSF Leakage, Forward VGS = V, VDS = 0 V IGSSR VGS = 20 V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th Gate Threshold Voltage Temperature Coefficient RDS on Static |
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