MSA-0600-GP4

MSA-0600-GP4 Datasheet

MSA-0600 Cascadable Silicon Bipolar MMIC Amplifier

Part	Datasheet
MSA-0600-GP4	MSA-0600-GP4 (pdf)

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MSA-0600 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet The MSA-0600 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC chip. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride selfalignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Typical Biasing Configuration • Cascadable 50 Gain Block • Low Operating Voltage V typical V d • 3 dB Bandwidth DC to GHz • High Gain dB Typical at GHz • Low Noise Figure dB Typical at GHz Chip Outline [1] R bias VCC > 5 V C block IN RFC Optional C block 3 1 MSA Vd = V Note This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. MSA-0600 Absolute Maximum Ratings Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum [1] 50 mA 200 mW +13 dBm 2 0 -65 to 200 Thermal Resistance [2,4] = Notes Permanent damage may occur if any of these limits are exceeded. TMounting Surface TMS = 25°C. Derate at 20 mW/°C for Surface > 190°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications [1], TA = 25°C Symbol GP P f3 dB VSWR NF P 1 dB IP 3 tD Vd dV/dT Parameters and Test Conditions [2] I d = 16 mA, Z O = 50 PowerGain \|S 21 \| 2 f = GHz Gain Flatness f = to GHz 3 dB Bandwidth Input VSWR f = to GHz Output VSWR f = to GHz 50 Noise Figure f = GHz Output Power at 1 dB Gain Compression Part Number Ordering Information Part Number MSA-0600-GP4 Devices Per Tray 100 MSA-0600 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 16 mA Freq. dB Mag A n g dB Mag A n g Mag A n g -148 -134 -125 159 13 -102 -121 151 15 -110 -120 145 17 -117 -119 140 20 -124 -121 123 25 -136 -123 117 26 -148 -134 96 29 -168 -149 79 27 -157 70 30 -171 61 28 -174 51 25 43 26 -170

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MSA-0600 Cascadable Silicon Bipolar MMIC Amplifier

Data Sheet

The MSA-0600 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC chip. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.

The MSA-series is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride selfalignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using mil gold wire.[1] See APPLICATIONS section, “Chip Use”.

Typical Biasing Configuration
• Cascadable 50 Gain Block
• Low Operating Voltage V typical V d
• 3 dB Bandwidth DC to GHz
• High Gain dB Typical at GHz
• Low Noise Figure dB Typical at GHz

Chip Outline [1]

R bias

VCC > 5 V

C block IN

RFC Optional

C block 3
1 MSA

Vd = V

Note This chip contains additional biasing options. The performance
specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.

MSA-0600 Absolute Maximum Ratings

Parameter Device Current Power Dissipation [2,3] RF Input Power Junction Temperature Storage Temperature

Absolute Maximum [1]
50 mA 200 mW +13 dBm 2 0 -65 to 200

Thermal Resistance [2,4] =

Notes Permanent damage may occur if any of these limits are exceeded. TMounting Surface TMS = 25°C. Derate at 20 mW/°C for Surface > 190°C. The small spot size of this technique results in a higher, though more accurate determination of than do alternate methods.

See MEASUREMENTS section “Thermal Resistance” for more information.

Electrical Specifications [1], TA = 25°C

Symbol GP P f3 dB

VSWR

NF P 1 dB IP 3 tD Vd dV/dT

Parameters and Test Conditions [2] I d = 16 mA, Z O = 50

PowerGain |S 21 | 2
f = GHz

Gain Flatness
f = to GHz
3 dB Bandwidth

Input VSWR
f = to GHz

Output VSWR
f = to GHz
50 Noise Figure
f = GHz

Output Power at 1 dB Gain Compression
Part Number Ordering Information

Part Number MSA-0600-GP4

Devices Per Tray 100

MSA-0600 Typical Scattering Parameters[1] ZO = 50 TA = 25°C, Id = 16 mA

Freq.
dB Mag A n g
dB Mag A n g

Mag A n g
-148
-134
-125
159 13
-102
-121
151 15
-110
-120
145 17
-117
-119
140 20
-124
-121
123 25
-136
-123
117 26
-148
-134
96 29
-168
-149
79 27
-157
70 30
-171
61 28
-174
51 25
43 26
-170

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Datasheet ID: MSA-0600-GP4 520469