FDW254PZ

FDW254PZ Datasheet

FDW254PZ

Part	Datasheet
FDW254PZ	FDW254PZ (pdf)

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FDW254PZ July 2008 FDW254PZ P-Channel 1.8V Specified MOSFET This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V. RDS ON = 12 VGS = V RDS ON = 15 VGS = V RDS ON = VGS = V • Rds ratings for use with V logic • ESD protection diode • Low gate charge • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package TSSOP-8 Pin 1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 254PZ FDW254PZ 13’’ Ratings ±8 1 to +150 96 208 Tape width 12mm Units °C/W Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDW254PZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = µA, Referenced to 25°C V mV/°C VDS = V, VGS = ±8 V, VGS = 0 V VDS = 0 V ±10 µA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient

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FDW254PZ

July 2008

FDW254PZ

P-Channel 1.8V Specified MOSFET

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 1.8V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, V.

RDS ON = 12 VGS = V RDS ON = 15 VGS = V RDS ON = VGS = V
• Rds ratings for use with V logic
• ESD protection diode
• Low gate charge
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1

Power Dissipation

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
254PZ

FDW254PZ
13’’

Ratings
±8 1 to +150
96 208

Tape width 12mm

Units
°C/W

Quantity 2500 units
2008 Fairchild Semiconductor Corporation

FDW254PZ

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = µA

ID = µA, Referenced to 25°C

V mV/°C

VDS = V, VGS = ±8 V,

VGS = 0 V VDS = 0 V
±10 µA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDW254PZ 514422