AT45DB321B-CC

AT45DB321B-CC Datasheet


Single Cycle Reprogram Erase and Program 8192 Pages 528 Bytes/Page Main Memory<br>• Supports Page and Block Erase Operations<br>• Two 528-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Nonvolatile Memory<br>• Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications<br>• Low Power Dissipation 4 mA Active Read Current Typical 2 µA CMOS Standby Current Typical<br>• Hardware Data Protection Feature<br>• 100% Compatible to AT45DB321<br>• 5.0V-tolerant Inputs SI, SCK, CS, RESET and WP Pins<br>• Commercial and Industrial Temperature Ranges

Part Datasheet
AT45DB321B-CC AT45DB321B-CC AT45DB321B-CC (pdf)
Related Parts Information
AT45DB321B-CI AT45DB321B-CI AT45DB321B-CI
AT45DB321B-TC AT45DB321B-TC AT45DB321B-TC
AT45DB321B-TI AT45DB321B-TI AT45DB321B-TI
AT45DB321B-RI AT45DB321B-RI AT45DB321B-RI
AT45DB321B-RC AT45DB321B-RC AT45DB321B-RC
PDF Datasheet Preview
• Single 2.7V - 3.6V Supply
• Serial Peripheral Interface SPI Compatible
• 20 MHz Max Clock Frequency
• Page Program Operation

Single Cycle Reprogram Erase and Program 8192 Pages 528 Bytes/Page Main Memory
• Supports Page and Block Erase Operations
• Two 528-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Nonvolatile Memory
• Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications
• Low Power Dissipation 4 mA Active Read Current Typical 2 µA CMOS Standby Current Typical
• Hardware Data Protection Feature
• 100% Compatible to AT45DB321
• 5.0V-tolerant Inputs SI, SCK, CS, RESET and WP Pins
• Commercial and Industrial Temperature Ranges

The AT45DB321B is a 2.7-volt only, serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 34,603,008 bits of memory are organized as 8192 pages of 528 bytes each. In addition to the main memor y, the AT45DB321B also contains two SRAM data buffers of 528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as reading or writing a continuous data

Pin Configurations

Pin Name Function

Chip Select

Serial Clock

Serial Input

Serial Output

Hardware Page Write Protect Pin

RESET

Chip Reset

RDY/BUSY Ready/Busy

CBGA Top View through Package
12345

D NC SCK GND VCC NC

E NC CS RDY/BSY WP NC

F NC SO SI RESET NC
32-megabit 2.7-volt Only

AT45DB321B

SOIC

RESET

RDY/BUSY

TSOP Top View Type 1

RDY/BUSY 1 RESET 2 WP 3 NC 4 NC 5 NC 6 VCC 7 GND 8 NC 9 NC 10 NC 11 NC 12 CS 13 SCK 14 SI 15 SO 16
32 NC 31 NC 30 NC 29 NC 28 NC 27 NC 26 NC 25 NC 24 NC 23 NC 22 NC 21 NC 20 NC 19 NC 18 NC 17 NC

Note:

DataFlash Card 1
7654321

See AT45DCB004 Datasheet

Block Diagram Memory Array
stream. EEPROM emulation bit or byte alterability is easily handled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode 0 and mode The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low power are essential. The device operates at clock frequencies up to 20 MHz with a typical active read current consumption of 4 mA.

To allow for simple in-system reprogrammability, the AT45DB321B does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321B is enabled through the chip select pin CS and accessed via a three-wire interface consisting of the Serial Input SI , Serial Output SO , and the Serial Clock SCK .

All programming cycles are self-timed, and no separate erase cycle is required before programming.

When the device is shipped from Atmel, the most significant page of the memory array may not be erased. In other words, the contents of the last page may not be filled with FFH.

FLASH MEMORY ARRAY

PAGE 528 BYTES

BUFFER 1 528 BYTES

BUFFER 2 528 BYTES

SCK CS

RESET VCC GND
Ordering Information
fSCK MHz

ICC mA Active Standby
Ordering Code

AT45DB321B-CC AT45DB321B-RC AT45DB321B-TC

AT45DB321B-CI AT45DB321B-RI AT45DB321B-TI

Package
44C1 28R 32T
44C1 28R 32T

Operation Range Commercial 0°C to 70°C

Industrial -40°C to 85°C
44C1 28R 32T

Package Type 44-ball 5 x 9 Array , mm Pitch, Plastic Chip-scale Ball Grid Array CBGA 28-lead, Wide, Plastic Gull Wing Small Outline Package SOIC 32-lead, Plastic Thin Small Outline Package TSOP
28 AT45DB321B

Packaging Information
44C1 CBGA

AT45DB321B

Dimensions in Millimeters and Inches . Controlling dimension Millimeters.

A1 ID

SIDE VIEW

TOP VIEW
0.010 MIN MAX
0.039 REF
54 3 21
0.079 REF

NON-ACCUMULATIVE

BSC NON-ACCUMULATIVE

DIA BALL TYP BOTTOM VIEW

TITLE 2325 Orchard Parkway 44C1, 44-ball 5 x 9 Array , 6 x 12 x mm Body, mm Ball R San Jose, CA 95131 Pitch Chip-scale Ball Grid Array Package CBGA
04/11/01
44C1
32T TSOP

PIN 1
0º ~ 8º c

Pin 1 Identifier

SEATING PLANE

GAGE PLANE

This package conforms to JEDEC reference MO-142, Variation BD. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is mm per side and on D1 is mm per side. Lead coplanarity is mm maximum.

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL A A1 A2 D D1 E L L1 b c e

MIN NOM MAX

BASIC

BASIC
More datasheets: PM0603-22NJ | PM0603-12NJ | PM0603-10NJ | PM0603-15NJ | FCI11N60 | ATWEBEVK-02 | ATWEBEVK-01 | AT45DB321B-CI | AT45DB321B-TC | AT45DB321B-TI


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Datasheet ID: AT45DB321B-CC 519048