FCI11N60
FCI11N60 Datasheet
FCI11N60 600V N-Channel MOSFET
| Part | Datasheet |
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FCI11N60 |
FCI11N60 (pdf) |
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| FCI11N60 600V N-Channel MOSFET FCI11N60 600V N-Channel MOSFET • 650V = 150°C • Typ. RDS on = • Ultra Low Gate Charge typ. Qg = 40nC • Low Effective Output Capacitance typ. Cosseff. = 95pF • 100% Avalanche Tested • RoHS Compliant December 2008 SuperFET TM SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCI11N60 600 11 7 33 ± 30 340 11 125 -55 to +150 FCI11N60 Unit V A V mJ A mJ V/ns W/°C °C Unit °C/W °C/W 2008 Fairchild Semiconductor Corporation FCI11N60 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCI11N60 Device FCI11N60 Package I2-PAK Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage / BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C VGS = 0V, ID = 250µA, TJ = 150°C ID = 250µA, Referenced to 25°C VGS = 0V, ID = 11A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250µA VGS = 10V, ID = 5.5A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 5.5A Note 4 Ciss Input Capacitance Coss Output Capacitance Crss |
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