FDW2503NZ

FDW2503NZ Datasheet

FDW2503NZ

Part	Datasheet
FDW2503NZ	FDW2503NZ (pdf)

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FDW2503NZ July 2008 FDW2503NZ Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, 20 V. RDS ON = 20 VGS = 4.5V RDS ON = 26 VGS = 2.5V • Extended VGSS range ±12V for battery applications • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2503NZ FDW2503NZ 13’’ 2008 Fairchild Semiconductor Corporation Ratings 20 ±12 30 to +150 100 125 Units °C/W Tape width 12mm Quantity 2500 units FDW2503NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th RDS on Gate Threshold Voltage Temperature Coefficient

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FDW2503NZ

July 2008

FDW2503NZ

Dual N-Channel 2.5V Specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, 20 V. RDS ON = 20 VGS = 4.5V RDS ON = 26 VGS = 2.5V
• Extended VGSS range ±12V for battery applications
• ESD protection diode note 3
• High performance trench technology for extremely low RDS ON
• Low profile TSSOP-8 package

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size
2503NZ

FDW2503NZ
13’’
2008 Fairchild Semiconductor Corporation

Ratings
20 ±12 30 to +150
100 125

Units
°C/W

Tape width 12mm

Quantity 2500 units

FDW2503NZ

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C
mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 16 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 12 V, VDS = 0 V

IGSSR

VGS = V, VDS = 0 V

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

RDS on

Gate Threshold Voltage Temperature Coefficient

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Datasheet ID: FDW2503NZ 514406