CAS100H12AM1
CAS100H12AM1 Datasheet
CAS100H12AM1 Summary
| Part | Datasheet |
|---|---|
CAS100H12AM1 |
CAS100H12AM1 (pdf) |
| PDF Datasheet Preview |
|---|
| CAS100H12AM1 Summary Cree introduces the industry’s first fully qualified and production ready All-Silicon Carbide power module. The module, rated at 100A current handling and 1200V blocking, allows higher efficiency, compact and lighter weight systems that can result in lower total system costs. Device Uses • High-Power converters • Motor Drives • Solar Inverters • UPS and SMPS • Induction Heating • Mil/Aero Key Specifications Key Specifications • Package size 50 x 89 x 25 mm3 • Blocking voltage 1200V • Current Rating 100A TC 100C • RDS on : • Enables compact and lightweight systems • High efficiency operation • Mitigate over-voltage protection • Ease of transistor gate controlents Gate Driver boards Available Top View Bottom View Competitive Comparison TJ = 150 Supplier, P/N Cree, CAS100H12AM1 Infineon, FF100R12RT4 Switch / Diode SiC MOSFET SiC Schottky Diode IGBT4 EC4 Diode VDS V 1200V 1200V ID A 105 ESW mJ Qrr nC VISOL kV Half-bridge module with Cree SiC MOSFET and SiC Diodes Module Construction • Populated with commercially released and qualified Cree SiC MOSFETs and Diodes • AlSiC baseplate decreases weight and increases temperature/ power cycling capability • Si3N4 AMB substrate provides rugged mechanical construction Suggested Resale Price Equivalent Electrical Circuit 6.8V RGint D1 S1/D2 6.8V RGint D2 G2 RTN Gate Driver BoardsS2 |
| More datasheets: M4791 SL005 | AFCT-57V6ANSZ | AFCT-57V6NSZ | CHF9838CNF500L | ACPM-5813-TR1 | ACPM-5813-BLK | ACPM-5813-SG1 | LP1505F20V00 | FSTUD32450GX | 1571 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CAS100H12AM1 Datasheet file may be downloaded here without warranties.