CAS100H12AM1

CAS100H12AM1 Datasheet


CAS100H12AM1 Summary

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CAS100H12AM1 CAS100H12AM1 CAS100H12AM1 (pdf)
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CAS100H12AM1 Summary

Cree introduces the industry’s first fully qualified and production ready All-Silicon Carbide power module. The module, rated at 100A current handling and 1200V blocking, allows higher efficiency, compact and lighter weight systems that can result in lower total system costs.

Device Uses
• High-Power converters
• Motor Drives
• Solar Inverters
• UPS and SMPS
• Induction Heating
• Mil/Aero

Key Specifications

Key Specifications
• Package size
50 x 89 x 25 mm3
• Blocking voltage 1200V
• Current Rating 100A TC 100C
• RDS on :
• Enables compact and lightweight systems
• High efficiency operation
• Mitigate over-voltage protection
• Ease of transistor gate controlents

Gate Driver boards Available

Top View

Bottom View

Competitive Comparison TJ = 150

Supplier, P/N

Cree, CAS100H12AM1 Infineon, FF100R12RT4

Switch / Diode

SiC MOSFET SiC Schottky Diode IGBT4 EC4 Diode

VDS V 1200V
1200V

ID A 105

ESW mJ

Qrr nC

VISOL kV

Half-bridge module with Cree SiC MOSFET and SiC Diodes

Module Construction
• Populated with commercially released and qualified Cree SiC MOSFETs and Diodes
• AlSiC baseplate decreases weight and increases temperature/ power cycling capability
• Si3N4 AMB substrate provides rugged mechanical construction

Suggested Resale Price

Equivalent Electrical Circuit
6.8V

RGint D1

S1/D2
6.8V

RGint D2

G2 RTN

Gate Driver BoardsS2
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Datasheet ID: CAS100H12AM1 506969