FDW2501NZ
FDW2501NZ Datasheet
FDW2501NZ
| Part | Datasheet |
|---|---|
FDW2501NZ |
FDW2501NZ (pdf) |
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| FDW2501NZ July 2008 FDW2501NZ Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, 20 V. RDS ON = 18 VGS = 4.5V RDS ON = 25 VGS = 2.5V • Extended VGSS range ±12V for battery applications • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • Low profile TSSOP-8 package Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size 2501NZ FDW2501NZ 13’’ Fairchild Semiconductor Corporation Ratings 20 ±12 30 to +150 100 125 Tape width 12mm Units V A W °C °C/W Quantity 2500 units FDW2501NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V IGSSF Leakage, Forward VGS = 12 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V mV/°C On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient |
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