FDS9933BZ
FDS9933BZ Datasheet
FDS9933BZ Dual P-Channel 2.5V Specified MOSFET
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FDS9933BZ |
FDS9933BZ (pdf) |
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| FDS9933BZ Dual P-Channel 2.5V Specified MOSFET March 2008 FDS9933BZ Dual P-Channel 2.5V Specified MOSFET -20V, -4.9A, - Max rDS on = at VGS = -4.5V, ID = -4.9A - Max rDS on = at VGS = -2.5V, ID = -4.0A - Low gate charge 11nC typical . - High performance trench technology for extremely low rDS on . - HBM ESD protection level >3kV Note - RoHS Compliant These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications load switching and power management, battery charging and protection circuits. - Battery Charging - Load Switching D2 D1 Pin 1 G2 S2 G1 S1 SO-8 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings -20 ±12 -30 -55 to +150 Units V A W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDS9933BZ Device FDS9933BZ Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDS9933BZ Dual P-Channel 2.5V Specified MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -16V, VGS = 0V VGS = ±12V, VDS = 0V mV/°C ±10 µA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C mV/°C VGS = -4.5V, ID = -4.9A VGS = -2.5V, ID = -4.0A VGS = -4.5V, ID = -4.9A, TJ = 125°C VDD = -10V, ID = -4.9A Dynamic Characteristics Ciss Coss Crss VDS = -10V, VGS = 0V, f = 1MHz 740 985 160 215 145 220 |
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