2N3810 2N3810A
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2N3810A (pdf) |
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2N3810 |
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2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature VCBO VCEO VEBO IC PD TJ, Tstg 60 50 500 600 -65 to +200 ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS ICBO VCB=50V IEBO VEB=4.0V BVCBO IC=10uA BVCEO IC=10mA BVEBO IE=10uA VCE SAT IC=100uA, IB=10uA VCE SAT IC=1.0mA, IB=100uA VBE SAT IC=100uA, IB=10uA VBE SAT IC=1.0mA, IB=100uA VBE ON VCE=5.0V, IC=100uA VCE=5.0V, IC=10uA VCE=5.0V, IC=100uA VCE=5.0V, IC=500uA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500uA, f=30MHz VCE=5.0V, IC=1.0mA, f=100MHz VCB=5.0V, IE=0, f=100kHz VBE=0.5V, IC=0, f=100kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz |
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