2N3810

2N3810 Datasheet

2N3810 2N3810A

Part	Datasheet
2N3810	2N3810 (pdf)

Related Parts	Information
2N3810A	2N3810A

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2N3810 2N3810A SILICON DUAL PNP TRANSISTORS w. c e n t r a l s e m i c o m DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature VCBO VCEO VEBO IC PD TJ, Tstg 60 50 500 600 -65 to +200 ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted SYMBOL TEST CONDITIONS ICBO VCB=50V IEBO VEB=4.0V BVCBO IC=10uA BVCEO IC=10mA BVEBO IE=10uA VCE SAT IC=100uA, IB=10uA VCE SAT IC=1.0mA, IB=100uA VBE SAT IC=100uA, IB=10uA VBE SAT IC=1.0mA, IB=100uA VBE ON VCE=5.0V, IC=100uA VCE=5.0V, IC=10uA VCE=5.0V, IC=100uA VCE=5.0V, IC=500uA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500uA, f=30MHz VCE=5.0V, IC=1.0mA, f=100MHz VCB=5.0V, IE=0, f=100kHz VBE=0.5V, IC=0, f=100kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz

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2N3810 2N3810A

SILICON DUAL PNP TRANSISTORS
w. c e n t r a l s e m i c o m

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.

MARKING FULL PART NUMBER

TO-78 CASE

MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation One Die Power Dissipation Both Dice Operating and Storage Junction Temperature

VCBO VCEO VEBO

IC PD TJ, Tstg
60 50 500 600 -65 to +200

ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted

SYMBOL TEST CONDITIONS

ICBO

VCB=50V

IEBO

VEB=4.0V

BVCBO

IC=10uA

BVCEO

IC=10mA

BVEBO

IE=10uA

VCE SAT IC=100uA, IB=10uA

VCE SAT IC=1.0mA, IB=100uA

VBE SAT IC=100uA, IB=10uA

VBE SAT IC=1.0mA, IB=100uA

VBE ON

VCE=5.0V, IC=100uA

VCE=5.0V, IC=10uA

VCE=5.0V, IC=100uA

VCE=5.0V, IC=500uA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=500uA, f=30MHz

VCE=5.0V, IC=1.0mA, f=100MHz

VCB=5.0V, IE=0, f=100kHz

VBE=0.5V, IC=0, f=100kHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=10V, IC=1.0mA, f=1.0kHz

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Datasheet ID: 2N3810 522763