FDS8333C

FDS8333C Datasheet

FDS8333C

Part	Datasheet
FDS8333C	FDS8333C (pdf)

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FDS8333C August 2002 FDS8333C 30V N & P-Channel MOSFETs These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Q1 A, 30V. RDS ON = 80 VGS = 10 V RDS ON = 130 VGS = V • Q2 A, 30V. RDS ON = 130 VGS = V RDS ON = 200 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON . • High power and handling capability in a widely used surface mount package. DD1DD2DD2 DD1 SO-8 Pin 1 SO-8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS8333C FDS8333C 7’’ ±16 ±20 to +150 78 40 Units W °C °C/W Tape width 12mm Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS8333C Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current On Characteristics Note 2 V GS th Gate Threshold Voltage GS th Gate Threshold Voltage Temperature Coefficient RDS on Static ID on Drain Current Forward Transconductance Q1 Dynamic Characteristics Ciss Input Capacitance

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FDS8333C

August 2002

FDS8333C
30V N & P-Channel MOSFETs

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• Q1 A, 30V. RDS ON = 80 VGS = 10 V RDS ON = 130 VGS = V
• Q2 A, 30V. RDS ON = 130 VGS = V RDS ON = 200 VGS = V
• Low gate charge
• High performance trench technology for extremely
low RDS ON .
• High power and handling capability in a widely used surface mount package.

DD1DD2DD2 DD1

SO-8

Pin 1 SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Note 1a Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS8333C

FDS8333C
7’’
±16
±20
to +150
78 40

Units

W °C °C/W

Tape width 12mm

Quantity 2500 units
2002 Fairchild Semiconductor Corporation

FDS8333C

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

Gate Threshold Voltage Temperature Coefficient

RDS on

Static

ID on

Drain Current

Forward Transconductance Q1

Dynamic Characteristics

Ciss

Input Capacitance

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Datasheet ID: FDS8333C 514377