FFH15S60STU
FFH15S60STU Datasheet
FFH15S60S 15 A, 600 V, STEALTH II Diode
| Part | Datasheet |
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FFH15S60STU |
FFH15S60STU (pdf) |
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| FFH15S60S 15 A, 600 V, STEALTH II Diode FFH15S60S • General Purpose • Switching Mode Power Supply • Boost Diode in Continuous Mode Power Factor • Power Switching Circuits September 2007 15 A, 600 V, STEALTH II Diode The FFH15S60S is a STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. TO-247-2L Cathode Anode Cathode Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM VRWM VR IF AV IFSM Parameter DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TC = 120oC TJ, TSTG Operating and Storage Temperature Range Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case Package Marking and Ordering Information Device Marking Device Package F15S60S FFH15S60STU TO-247-2L Reel Size Ratings Unit -65 to +150 Ratings Unit oC/W Tape Width Quantity 2007 Fairchild Semiconductor Corporation FFH15S60S 15 A, 600 V, STEALTH II Diode Electrical Characteristics TC = 25oC unless otherwise noted Parameter IF = 15A IF = 15A VR = 600V VR = 600V IF = 1A, di/dt = 100A/µs, VR = 30V Trr Irr S factor IF = 15A, di/dt = 200A/µs, VR = 390V Trr Irr S factor IF = 15A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy L = 40mH Notes 1 Pulse Test Pulse width = 300µs, Duty Cycle = 2% TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25oC TC = 125oC Test Circuit and Waveforms Min. Typ. 23 29 55 118 Max. Unit 100 500 |
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