FDS7066ASN3

FDS7066ASN3 Datasheet

FDS7066ASN3

Part	Datasheet
FDS7066ASN3	FDS7066ASN3 (pdf)

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FDS7066ASN3 August 2004 FDS7066ASN3 30V N-Channel SyncFET The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS7066ASN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode. • DC/DC converter • 19 A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability • Fast switching • FLMP SO-8 package Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS7066ASN3 FDS7066ASN3 13’’ 2004 Fairchild Semiconductor Corporation Ratings 30 ±20 19 60 to +150 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS7066ASN3 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V mV/°C 500 µA ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C

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FDS7066ASN3

August 2004

FDS7066ASN3
30V N-Channel SyncFET

The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDS7066ASN3 includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS7066ASN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode.
• DC/DC converter
• 19 A, 30 V

RDS ON = VGS = 10 V RDS ON = VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability
• Fast switching
• FLMP SO-8 package Enhanced thermal performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS7066ASN3

FDS7066ASN3
13’’
2004 Fairchild Semiconductor Corporation

Ratings
30 ±20 19 60 to +150

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

FDS7066ASN3

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
mV/°C
500 µA ±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C

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Datasheet ID: FDS7066ASN3 514360