FDS6609A

FDS6609A Datasheet

FDS6609A

Part	Datasheet
FDS6609A	FDS6609A (pdf)

PDF Datasheet Preview
FDS6609A April 2000 PRELIMINARY FDS6609A P-Channel Logic Level MOSFET This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Motor Drive • A, V RDS ON = V GS = -10 V RDS ON = V GS = V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 G SSS Absolute Maximum Ratings TA=25oC unless otherwise noted V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS6609A FDS6609A 13’’ 5 6 7 8 Ratings ±20 -40 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS6609A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS IDSS Breakdown Voltage VGS = 0 V, ID = -250 µA Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR VGS = -20 V VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th

PDF Datasheet Preview

FDS6609A

April 2000 PRELIMINARY

FDS6609A

P-Channel Logic Level MOSFET

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• DC/DC converter
• Load switch
• Motor Drive
• A, V RDS ON = V GS = -10 V RDS ON = V GS = V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability

SO-8

G SSS

Absolute Maximum Ratings TA=25oC unless otherwise noted

V DSS V GSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDS6609A

FDS6609A
13’’
5 6 7 8

Ratings
±20 -40 -55 to +150
50 25

Tape width 12mm
4 3 2 1

Units
°C/W °C/W

Quantity 2500 units
2000 Fairchild Semiconductor Corporation

FDS6609A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

IDSS

Breakdown Voltage VGS = 0 V, ID = -250 µA

Breakdown Voltage Temperature Coefficient

ID = -250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V
mV/°C

IGSSF

Leakage, Forward

VGS = 20 V, VDS = 0 V
100 nA

IGSSR

VGS = -20 V VDS = 0 V

On Characteristics Note 2

V GS th

Gate Threshold Voltage

GS th

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDS6609A Datasheet file may be downloaded here without warranties.

Datasheet ID: FDS6609A 514330