FDS5692Z
FDS5692Z Datasheet
FDS5692Z N-Channel UltraFET MOSFET
| Part | Datasheet |
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FDS5692Z |
FDS5692Z (pdf) |
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| FDS5692Z N-Channel UltraFET MOSFET February 2006 FDS5692Z N-Channel UltraFET MOSFET 50V, 5.8A, 24mΩ This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - Max rDS on = 24mΩ at VGS = 10V, ID = 5.8A - Max rDS on = 33mΩ at VGS = 4.5V, ID = 5.6A - ESD protection diode note 3 - Low Qgd - DC/DC converter - Fast switching speed SO-8 S MOSFET Maximum Ratings TA=25oC unless otherwise noted VDS VGS ID Drain-Source Voltage Parameter Gate-Source Voltage Drain Current Continuous Note 1a Pulsed Single Pulse Avalanche Energy UltraFET Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Package Reel Size FDS5692Z FDS5692Z SO-8 13” 4 3 2 1 Ratings 50 ± 20 40 72 to 150 50 125 25 Units °C/W Tape width 12mm Quantity 2500units FDS5692Z N-Channel UltraFET MOSFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Drain-Source Avalanche Energy Single Pulse Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 4 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient rDS on Static Dynamic Characteristics |
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