ZXMP6A16DN8
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ZXMP6A16DN8TC (pdf) |
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ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V RDS ON = ID= -3.9A This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC-DC converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMP6A16DN8TA 7’‘ 12mm ZXMP6A16DN8TC 13’‘ 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING ZXMP 6A16D PINOUT Top view ISSUE 3 - MAY 2005 1 ZXMP6A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain b d b d a d Pulsed Drain Current c Continuous Source Current Body Diode b Pulsed Source Current Body Diode c Power Dissipation at TA=25°C a d Linear Derating Factor Power Dissipation at TA=25°C a e Linear Derating Factor Power Dissipation at TA=25°C b d Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD Tj:Tstg LIMIT -55 to +150 UNIT W mW/°C W mW/°C W mW/°C THERMAL RESISTANCE PARAMETER Junction to Ambient a d Junction to Ambient b e Junction to Ambient b d VALUE 100 70 60 UNIT °C/W °C/W °C/W |
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