FQB11N40TM

FQB11N40TM Datasheet

FQB11N40 / FQI11N40

Part	Datasheet
FQB11N40TM	FQB11N40TM (pdf)

Related Parts	Information
FQI11N40TU	FQI11N40TU

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FQB11N40 / FQI11N40 November 2001 FQB11N40 / FQI11N40 400V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. • 11.4A, 400V, RDS on = = 10 V • Low gate charge typical 27 nC • Low Crss typical 20 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQB11N40 / FQI11N40 400 46 ± 30 520 147 -55 to +150 Units V A V mJ A mJ V W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount

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FQB11N40 / FQI11N40

November 2001

FQB11N40 / FQI11N40
400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
• 11.4A, 400V, RDS on = = 10 V
• Low gate charge typical 27 nC
• Low Crss typical 20 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB11N40 / FQI11N40 400 46 ± 30 520 147
-55 to +150

Units V A V mJ A mJ V W

W/°C °C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

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Datasheet ID: FQB11N40TM 515115