FDB42AN15A0

FDB42AN15A0 Datasheet


FDP42AN15A0 / FDB42AN15A0

Part Datasheet
FDB42AN15A0 FDB42AN15A0 FDB42AN15A0 (pdf)
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FDP42AN15A0 / FDB42AN15A0

September 2002

FDP42AN15A0 / FDB42AN15A0

N-Channel MOSFET 150V, 35A,
• rDS ON = Typ. , VGS = 10V, ID = 12A
• Qg tot = 33nC Typ. , VGS = 10V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Qualified to AEC Q101

Formerly developmental type 82864
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems

GATE

DRAIN FLANGE

SOURCE

TO-263AB

FDB SERIES

DRAIN FLANGE

SOURCE DRAIN GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, with = 43oC/W Pulsed

Single Pulse Avalanche Energy Note 1

Power dissipation Derate above 25oC

TJ, TSTG Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-220,TO-263

Thermal Resistance Junction to Ambient TO-220,TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area

Ratings 150 ±20
35 24 5 Figure 4 90 150 -55 to 175
62 43

Units V

A mJ W/oC
oC/W oC/W oC/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality
systems certification.
2002 Fairchild Semiconductor Corporation

FDP42AN15A0 / FDB42AN15A0
Package Marking and Ordering Information

Device Marking FDB42AN15A0 FDP42AN15A0

Device FDB42AN15A0 FDP42AN15A0

Package TO-263AB TO-220AB

Reel Size 330mm Tube

Tape Width 24mm N/A

Quantity 800 units 50 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 120V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA ID = 12A, VGS = 10V ID = 6A, VGS = 6V ID = 12A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 2V

VDD = 75V ID = 12A Ig = 1.0mA

Switching Characteristics VGS = 10V
tON td ON

Turn-On Time Turn-On Delay Time
tr td OFF

Rise Time Turn-Off Delay Time
tf tOFF

Fall Time Turn-Off Time

VDD = 75V, ID = 12A VGS = 10V, RGS =
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Datasheet ID: FDB42AN15A0 514238