FDJ128N

FDJ128N Datasheet

FDJ128N

Part	Datasheet
FDJ128N	FDJ128N (pdf)

Related Parts	Information
FDJ128N_F077	FDJ128N_F077

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FDJ128N August 2004 FDJ128N N-Channel Vgs Specified MOSFET This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Battery management • A, 20 V. RDS ON = 35 VGS = V RDS ON = 51 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • Compact industry standard SC75-6 surface mount package Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDJ128N 7’’ Ratings 20 ± 12 16 to +150 Tape width 8mm Units W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDJ128N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V IGSS Leakage VGS = ±12 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current

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FDJ128N

August 2004

FDJ128N

N-Channel Vgs Specified MOSFET

This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
• Battery management
• A, 20 V.

RDS ON = 35 VGS = V RDS ON = 51 VGS = V
• Low gate charge
• High performance trench technology for extremely low RDS ON
• Compact industry standard SC75-6 surface mount package

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

PD TJ, TSTG

Power Dissipation for Single Operation

Note 1a

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDJ128N
7’’

Ratings
20 ± 12 16
to +150

Tape width 8mm

Units

W °C
°C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDJ128N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V

IGSS

Leakage

VGS = ±12 V, VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

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Datasheet ID: FDJ128N 514187