FDJ128N
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FDJ128N_F077 (pdf) |
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FDJ128N |
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FDJ128N August 2004 FDJ128N N-Channel Vgs Specified MOSFET This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Battery management • A, 20 V. RDS ON = 35 VGS = V RDS ON = 51 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • Compact industry standard SC75-6 surface mount package Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a PD TJ, TSTG Power Dissipation for Single Operation Note 1a Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Package Marking and Ordering Information Device Marking Device Reel Size FDJ128N 7’’ Ratings 20 ± 12 16 to +150 Tape width 8mm Units W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDJ128N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 0 V IGSS Leakage VGS = ±12 V, VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current |
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