FDJ1028N

FDJ1028N Datasheet


FDJ1028N N-Channel Vgs MOSFET

Part Datasheet
FDJ1028N FDJ1028N FDJ1028N (pdf)
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FDJ1028N N-Channel Vgs MOSFET

August 2006

FDJ1028N N-Channel Vgs MOSFET
• A, 20 V.

RDS ON = 90 VGS = V RDS ON = 130 VGS = V
• Low gate charge
• High performance trench technology for extremely low RDS ON
• FLMP SC75 package Enhanced thermal performance in industry-standard package size
• Battery management

This dual N-Channel 2.5V MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are optimized for battery power management applications.

S2 S1 G1

G2 S2 S1

Bottom Drain Contact

Bottom Drain Contact

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for single Operation

Note 1a

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case

Ratings
20 ±12 to +150
Packge Marking and Ordering Information

Device Marking

Device

FDJ1028N

Reel Size

Tape width

Units

W °C
°C/W

Quantity
3000 units
2005 Fairchild Semiconductor Corporation

FDJ1028N N-Channel Vgs MOSFET

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV DSS

Breakdown Voltage

Breakdown Voltage Temperature

IDSS

Zero Gate Voltage Drain Current

IGSS

Leakage

On Characteristics Note 2

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V
20 13

V mV/°C
±100

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature

Static

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C
mV/°C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = 3.2A, TJ = 125°C
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Datasheet ID: FDJ1028N 514184