FDJ1028N
FDJ1028N Datasheet
FDJ1028N N-Channel Vgs MOSFET
| Part | Datasheet |
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FDJ1028N |
FDJ1028N (pdf) |
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| FDJ1028N N-Channel Vgs MOSFET August 2006 FDJ1028N N-Channel Vgs MOSFET • A, 20 V. RDS ON = 90 VGS = V RDS ON = 130 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • FLMP SC75 package Enhanced thermal performance in industry-standard package size • Battery management This dual N-Channel 2.5V MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS ON and thermal properties of the device are optimized for battery power management applications. S2 S1 G1 G2 S2 S1 Bottom Drain Contact Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for single Operation Note 1a TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Ratings 20 ±12 to +150 Packge Marking and Ordering Information Device Marking Device FDJ1028N Reel Size Tape width Units W °C °C/W Quantity 3000 units 2005 Fairchild Semiconductor Corporation FDJ1028N N-Channel Vgs MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage Breakdown Voltage Temperature IDSS Zero Gate Voltage Drain Current IGSS Leakage On Characteristics Note 2 VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V VGS = ±12 V, VDS = 0 V 20 13 V mV/°C ±100 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Static Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C mV/°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = 3.2A, TJ = 125°C |
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