FDG361N
FDG361N Datasheet
FDG361N
| Part | Datasheet |
|---|---|
FDG361N |
FDG361N (pdf) |
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| FDG361N August 2001 FDG361N N-Channel 100V Specified These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. • Load switch • Battery protection • Power management • A, 100 V. RDS ON = 500 VGS = 10 V RDS ON = 550 VGS = V • Low gate charge 3.7nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON Pin 1 SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDG361N 7’’ Ratings 100 ±20 −55 to +150 300 333 Tape width 8mm Units °C/W °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDG361N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 80 V, VGS = 0 V IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current |
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