AOP610

AOP610 Datasheet

AOP610 Complementary Enhancement Mode Field Effect Transistor

Part	Datasheet
AOP610	AOP610 (pdf)

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AOP610 Complementary Enhancement Mode Field Effect Transistor The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free meets ROHS & Sony 259 specifications . AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical. n-channel p-channel VDS V = 30V -30V ID = 7.7A VGS=10V -6.2A VGS=10V RDS ON RDS ON < 24mΩ VGS=10V < 39m Ω VGS = -10V < 42mΩ VGS=4.5V < 56m Ω VGS = -4.5V ESD rating 2000V HBM PDIP-8 S2/A 1 8 D2/K N-ch G2 2 7 D2/K S1 G1 P-ch n-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B 10 15 Junction and Storage Temperature Range TJ, TSTG -55 to 150 p-channel Max p-channel -30 ±20 -30 15 33 -55 to 150 Units V W A mJ °C Thermal Characteristics n-channel+schottky and p-channel Parameter

PDF Datasheet Preview

AOP610 Complementary Enhancement Mode Field Effect Transistor
The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is ESD protected. Standard product AOP610 is Pb-free meets ROHS & Sony 259 specifications . AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical.
n-channel
p-channel

VDS V = 30V
-30V

ID = 7.7A VGS=10V -6.2A VGS=10V

RDS ON

RDS ON
< 24mΩ VGS=10V < 39m Ω VGS = -10V
< 42mΩ VGS=4.5V < 56m Ω VGS = -4.5V

ESD rating 2000V HBM

PDIP-8

S2/A 1 8 D2/K N-ch

G2 2 7 D2/K

S1 G1

P-ch
n-channel

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter

Symbol Max n-channel

Drain-Source Voltage

Gate-Source Voltage
±20

Continuous Drain TA=25°C

Current A

TA=70°C

Pulsed Drain Current B

Power Dissipation

TA=25°C TA=70°C

Avalanche Current B

Repetitive avalanche energy 0.3mH B
10 15

Junction and Storage Temperature Range TJ, TSTG
-55 to 150
p-channel

Max p-channel -30 ±20 -30 15 33
-55 to 150

Units V

W A mJ °C

Thermal Characteristics n-channel+schottky and p-channel

Parameter

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Datasheet ID: AOP610 516285