FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor
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FDC636P (pdf) |
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May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. A, -20 V. RDS ON = VGS = V RDS ON = VGS = V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS ON . Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 G D SuperSOT TM -6 pin 1 D SO-8 SOT-223 SOIC-16 Absolute Maximum RatingsTA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Maximum Power Dissipation Note 1a Note 1b TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Case Note 1 1998 Fairchild Semiconductor Corporation FDC636P -20 ±8 -11 -55 to 150 78 30 Units V A °C/W °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS |
More datasheets: HEDL-5540#E11 | HEDL-5540#E06 | HEDL-5540#C12 | HEDL-5540#C02 | HEDL-5540#A05 | HEDL-5540#A01 | HEDL-5540#I06 | HEDL-5640#A12 | EA111AUS | ACT111AUS-T |
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