FDG326P

FDG326P Datasheet

FDG326P

Part	Datasheet
FDG326P	FDG326P (pdf)

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FDG326P January 2001 FDG326P P-Channel 1.8V Specified MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • Battery management • Load switch • A, V. RDS ON = 140 VGS = V RDS ON = 180 VGS = V RDS ON = 250 VGS = V • Low gate charge • High performance trench technology for extremely low RDS ON • Compact industry standard SC70-6 surface mount package SC70-6 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDG326P 7’’ Ratings ±8 -55 to +150 Tape width 8mm Units °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDG326P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = V, VDS = 0 V V mV/°C 100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance

PDF Datasheet Preview

FDG326P

January 2001

FDG326P

P-Channel 1.8V Specified MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
• Battery management
• Load switch
• A, V.

RDS ON = 140 VGS = V RDS ON = 180 VGS = V RDS ON = 250 VGS = V
• Low gate charge
• High performance trench technology for extremely low RDS ON
• Compact industry standard SC70-6 surface mount package

SC70-6

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDG326P
7’’

Ratings
±8 -55 to +150

Tape width 8mm

Units
°C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDG326P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA ID = µA, Referenced to 25°C

VDS = V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = V, VDS = 0 V

V mV/°C
100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

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Datasheet ID: FDG326P 514166