FGPF90N30

FGPF90N30 Datasheet

FGPF90N30 300V, 90A PDP IGBT

Part	Datasheet
FGPF90N30	FGPF90N30 (pdf)

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FGPF90N30 300V, 90A PDP IGBT FGPF90N30 300V, 90A PDP IGBT • High Current Capability • Low saturation voltage VCE sat =1.5V IC = 60A • High Input Impedance • Fast switch • RoHS Complaint Application PDP System October 2006 Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential. TO-220F 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings VCES VGES IC pulse 1 PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25oC TC = 25oC TC = Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj FGPF90N30 300 ± 30 220 -55 to +150 -55 to +150 Units V A W oC Typ. Max. Units oC/W oC/W 2006 Fairchild Semiconductor Corporation FGPF90N30 300V, 90A PDP IGBT Package Marking and Ordering Information Device Marking FGPF90N30 Device FGFP90N30TU Package TO-220F Packaging Type Rail / Tube Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC =30A, VGE = 15V IC =60A, VGE = 15V IC = 90A, VGE = 15V TC = IC = 90A, VGE = 15V TC = Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td on tr td off tf td on tr td off tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 200 V, IC = 60A RG = VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 60A RG = VGE = 15V Resistive Load, TC = VCE = 200 V, IC = 60A VGE = 15V Qty per Tube 50ea Max Qty per Box Min. Typ. Max. Units

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FGPF90N30 300V, 90A PDP IGBT

FGPF90N30
300V, 90A PDP IGBT
• High Current Capability
• Low saturation voltage VCE sat =1.5V IC = 60A
• High Input Impedance
• Fast switch
• RoHS Complaint

Application

PDP System

October 2006

Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential.

TO-220F 1.Gate 2.Collector 3.Emitter

Absolute Maximum Ratings

VCES VGES IC pulse 1 PD

TJ Tstg TL

Collector-Emitter Voltage

Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25oC TC = 25oC TC =

Storage Temperature Range

Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Notes 1 Repetitive test , pluse width = 100usec , Duty = * Ic_pluse limited by max Tj

FGPF90N30
300 ± 30 220 -55 to +150 -55 to +150

Units

V A W oC

Typ.

Max.

Units
oC/W oC/W
2006 Fairchild Semiconductor Corporation

FGPF90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information

Device Marking

FGPF90N30

Device

FGFP90N30TU

Package

TO-220F

Packaging Type

Rail / Tube

Electrical Characteristics TC = 25oC unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES

Collector-Emitter Breakdown Voltage

ICES

IGES

Temperature Coefficient of Breakdown Voltage

Collector Cut-Off Current

G-E Leakage Current

VGE = 0V, IC = 250uA

VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V

On Characteristics

VGE th

G-E Threshold Voltage

VCE sat Collector to Emitter Saturation Voltage

IC = 250uA, VCE = VGE

IC =30A, VGE = 15V IC =60A, VGE = 15V IC = 90A, VGE = 15V TC = IC = 90A, VGE = 15V TC =

Dynamic Characteristics

Cies Coes Cres

VCE = 30V, VGE = 0V f = 1MHz

Switching Characteristics
td on tr td off tf td on tr td off tf Qg Qge Qgc

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

VCC = 200 V, IC = 60A RG = VGE = 15V Resistive Load, TC = 25oC

VCC = 200 V, IC = 60A RG = VGE = 15V Resistive Load, TC =

VCE = 200 V, IC = 60A VGE = 15V

Qty per Tube
50ea

Max Qty per Box

Min. Typ. Max. Units

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Datasheet ID: FGPF90N30 514650