FDG314P

FDG314P Datasheet

FDG314P

Part	Datasheet
FDG314P	FDG314P (pdf)

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FDG314P July 2000 FDG314P Digital FET, P-Channel This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as volts. Applications • Power Management • Load switch • Signal switch • A, -25 V. RDS ON = VGS = V RDS ON = VGS = V. • Very low gate drive requirements allowing direct operation in 3V cirucuits VGS th V . • Gate-Source Zener for ESD ruggedness >6 kV Human Body Model . • Compact industry standard SC70-6 surface mount package. SC70-6 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID TJ, Tstg ESD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model 100pf/1500 Ohm Ratings -25 ±8 -55 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDG314P 7’’ Tape Width 8mm Units V A W °C kV °C/W Quantity 3000 units Fairchild Semiconductor International FDG314P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA Breakdown Voltage Temperature ID = -250 µA, Referenced to 25°C Coefficient mV/°C IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate-Body Leakage Current VGS = -8 V, VDS = 0 V -100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS on Static Drain-Source On-Resistance ID on gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = A 125°C VGS = V, ID = A VGS = V, VDS = -5 V VDS = V, ID = A mV/°C Dynamic Characteristics

PDF Datasheet Preview

FDG314P

July 2000

FDG314P

Digital FET, P-Channel

This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as volts.

Applications
• Power Management
• Load switch
• Signal switch
• A, -25 V. RDS ON = VGS = V

RDS ON = VGS = V.
• Very low gate drive requirements allowing direct
operation in 3V cirucuits VGS th V .
• Gate-Source Zener for ESD ruggedness
>6 kV Human Body Model .
• Compact industry standard SC70-6 surface mount
package.

SC70-6

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

TJ, Tstg ESD

Drain-Source Voltage

Gate-Source Voltage Drain Current - Continuous
- Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Operating and Storage Junction Temperature Range

Electrostatic Discharge Rating MIL-STD-883D Human Body Model 100pf/1500 Ohm

Ratings
-25 ±8 -55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDG314P
7’’

Tape Width 8mm

Units

V A W °C kV
°C/W

Quantity 3000 units

Fairchild Semiconductor International

FDG314P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA

Breakdown Voltage Temperature ID = -250 µA, Referenced to 25°C Coefficient
mV/°C

IDSS

Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V

IGSS

Gate-Body Leakage Current

VGS = -8 V, VDS = 0 V
-100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

RDS on

Static Drain-Source On-Resistance

ID on gFS

On-State Drain Current Forward Transconductance

VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25°C

VGS = V, ID = A VGS = V, ID = A 125°C VGS = V, ID = A VGS = V, VDS = -5 V VDS = V, ID = A
mV/°C

Dynamic Characteristics

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Datasheet ID: FDG314P 514165