FDMS8848NZ
FDMS8848NZ Datasheet
FDMS8848NZ N-Channel MOSFET
| Part | Datasheet |
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FDMS8848NZ |
FDMS8848NZ (pdf) |
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| FDMS8848NZ N-Channel MOSFET May 2009 FDMS8848NZ N-Channel 40 V, 49 A, m: - Max rDS on = m at VGS = 10 V, ID = A - Max rDS on = m at VGS = V, ID = A - Advanced Package and Silicon combination for low rDS on and high efficiency - MSL1 robust package design - RoHS Compliant The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. - Computing VR & IMVP Vcore - Secondary Side Synchronous Rectifier - POL DC/DC Converter - Oring FET/ Load Switching Bottom Pin 1 S Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 40 ±20 49 143 90 480 104 -55 to +150 Units V mJ W °C RTJC RTJA Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8848NZ Device FDMS8848NZ Package Power 56 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units 2009 Fairchild Semiconductor Corporation FDMS8848NZ FDMS8848NZ N-Channel MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 PA, VGS = 0 V ID = 250 PA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V mV/°C ±10 On Characteristics VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C mV/°C VGS = 10 V, ID = A rDS on Static Drain to Source On Resistance VGS = V, ID = A VGS = 10 V, ID = A, TJ = 125 °C Forward Transconductance VDS = 10 V, ID = A Dynamic Characteristics Ciss Coss Crss Rg VDS = 20 V, VGS = 0 V, f = 1 MHz 6071 8075 Switching Characteristics |
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