FDS4435
FDS4435 Datasheet
FDS4435
| Part | Datasheet |
|---|---|
FDS4435 |
FDS4435 (pdf) |
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| FDS4435 October 2001 FDS4435 30V P-Channel MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings 4.5V 25V . • Power management • Load switch • Battery protection • A, V RDS ON = 20 VGS = V RDS ON = 35 VGS = V • Low gate charge 17nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b TJ, TSTG Note 1c Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1c Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDS4435 FDS4435 13’’ 2001 Fairchild Semiconductor Corporation Ratings ±25 1 to +175 50 125 25 Tape width 12mm Units °C/W °C/W °C/W Quantity 2500 units FDS4435 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Breakdown Voltage VGS = 0 V, ID = µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = µA, Referenced to 25°C VDS = V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR VGS = V, VDS = 0 V On Characteristics Note 2 V GS th Gate Threshold Voltage GS th Gate Threshold Voltage Temperature Coefficient |
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