FDD6N20TF

FDD6N20TF Datasheet

FDD6N20 / FDU6N20 N-Channel MOSFET

Part	Datasheet
FDD6N20TF	FDD6N20TF (pdf)

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FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20TM N-Channel MOSFET 200V, 4.5A, • RDS on = Typ. VGS = 10V, ID = 2.3A • Low gate charge Typ. 4.7nC • Low Crss Typ. 6.3pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2007 UniFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D-PAK FDD Series G D S I-PAK FDU Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC -Continuous TC = 100oC - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Note 1 Note 2 Note 1 Note 1 Note 3 Ratings 200 ±30 18 60 40 -55 to +150 300 Ratings 110 Units V A mJ A mJ V/ns W/oC Units oC/W 2007 Fairchild Semiconductor Corporation FDD6N20 / FDU6N20 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDD6N20 Device FDD6N20TM Package D-PAK Reel Size 380mm Tape Width 16mm FDD6N20 FDD6N20TF D-PAK 380mm 16mm FDU6N20 FDU6N20TU I-PAK Quantity 2500 2000 70 Electrical Characteristics Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250uA, VGS = 0V, TJ = 25oC ID = 250uA, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = ±30V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 160V, ID = 6A VGS = 10V

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FDD6N20 / FDU6N20 N-Channel MOSFET

FDD6N20TM

N-Channel MOSFET
200V, 4.5A,
• RDS on = Typ. VGS = 10V, ID = 2.3A
• Low gate charge Typ. 4.7nC
• Low Crss Typ. 6.3pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

May 2007

UniFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

D-PAK FDD Series

G D S I-PAK FDU Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol VDSS VGSS

IDM EAS IAR EAR dv/dt

Parameter

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC -Continuous TC = 100oC
- Pulsed

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate above 25oC

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Note 1 Note 2 Note 1 Note 1 Note 3

Ratings 200 ±30 18 60 40
-55 to +150 300

Ratings 110

Units V

A mJ A mJ V/ns W/oC

Units
oC/W
2007 Fairchild Semiconductor Corporation

FDD6N20 / FDU6N20 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking FDD6N20

Device FDD6N20TM

Package D-PAK

Reel Size 380mm

Tape Width 16mm

FDD6N20

FDD6N20TF

D-PAK
380mm
16mm

FDU6N20

FDU6N20TU

I-PAK

Quantity 2500 2000 70

Electrical Characteristics

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250uA, VGS = 0V, TJ = 25oC

ID = 250uA, Referenced to 25oC

VDS = 200V, VGS = 0V

VDS = 160V, TC = 125oC

VGS = ±30V, VDS = 0V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250uA VGS = 10V, ID = 2.3A VDS = 40V, ID = 2.3A

Note 4

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs

Gate to Drain “Miller” Charge

VDS = 25V, VGS = 0V f = 1MHz

VDS = 160V, ID = 6A VGS = 10V

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Datasheet ID: FDD6N20TF 514140