FDP8443
FDP8443 Datasheet
FDP8443 N-Channel MOSFET
| Part | Datasheet |
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FDP8443 |
FDP8443 (pdf) |
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| FDP8443 N-Channel MOSFET August 2007 FDP8443 N-Channel MOSFET 40V, 80A, 3.5mΩ - Typ rDS on = 2.7mΩ at VGS = 10V, ID = 80A - Typ Qg 10 = 142nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter / Alternator - Distributed Power Architecture and VRMs - Primary Switch for 12V Systems 2007 Fairchild Semiconductor Corporation FDP8443 N-Channel MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 144oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, with = 62oC/W Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Note 1 Ratings 40 ±20 80 20 See Figure 4 531 188 -55 to +175 Units V mJ W/oC Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note 2 Package Marking and Ordering Information oC/W oC/W Device Marking FDP8443 Device FDP8443 Package TO-220AB Reel Size Tube Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics Tape Width N/A Quantity 50 units Min Typ Max Units BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS = 32V, VGS = 0V TC = 150oC VGS = ±20V ±100 nA VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 80A, VGS= 10V ID = 80A, VGS= 10V, TJ = 175oC Ciss Coss Crss RG Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 35A Ig = 1mA 9310 142 185 nC FDP8443 N-Channel MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Switching Characteristics VGS = 10V ton td on tr td off tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 20V, ID = 35A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics |
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