FDB8870-F085
FDB8870-F085 Datasheet
FDB8870_F085 N-Channel MOSFET
| Part | Datasheet |
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FDB8870-F085 |
FDB8870-F085 (pdf) |
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| FDB8870_F085 N-Channel MOSFET FDB8870_F085 N-Channel MOSFET 30V, 160A, 3.9mΩ This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. • DC/DC converters July 2010 • rDS ON = 3.9mΩ, VGS = 10V, ID = 35A • rDS ON = 4.4mΩ, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low rDS ON • Low gate charge • High power and current handling capability • Qualified to AEC Q101 • RoHS Compliant GATE SOURCE TO-263AB DRAIN FDB SERIES FLANGE MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 43oC/W Pulsed Single Pulse Avalanche Energy Note 2 Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 ±20 160 150 23 Figure 4 300 160 -55 to 175 Units V A mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Note 3 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area oC/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8870 Device FDB8870_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units 2010Fairchild Semiconductor Corporation FDB8870_F085 N-Channel MOSFET Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250uA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250uA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics VGS = 10V Turn-On Time td ON Turn-On Delay Time Rise Time |
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