FDB8870-F085

FDB8870-F085 Datasheet


FDB8870_F085 N-Channel MOSFET

Part Datasheet
FDB8870-F085 FDB8870-F085 FDB8870-F085 (pdf)
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FDB8870_F085 N-Channel MOSFET

FDB8870_F085

N-Channel MOSFET 30V, 160A, 3.9mΩ

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed.
• DC/DC converters

July 2010
• rDS ON = 3.9mΩ, VGS = 10V, ID = 35A
• rDS ON = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS ON
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant

GATE

SOURCE

TO-263AB DRAIN FDB SERIES FLANGE

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS VGS

EAS PD TJ, TSTG

Parameter Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 43oC/W Pulsed

Single Pulse Avalanche Energy Note 2

Power dissipation Derate above 25oC

Operating and Storage Temperature

Ratings 30 ±20
160 150 23 Figure 4 300 160 -55 to 175

Units V

A mJ W/oC

Thermal Characteristics

Thermal Resistance Junction to Case TO-263

Thermal Resistance Junction to Ambient TO-263 Note 3

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
oC/W oC/W oC/W
Package Marking and Ordering Information

Device Marking FDB8870

Device FDB8870_F085

Package TO-263AB

Reel Size 330mm

Tape Width 24mm

Quantity 800 units
2010Fairchild Semiconductor Corporation

FDB8870_F085 N-Channel MOSFET

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250uA, VGS = 0V

VDS = 24V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250uA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID = 35A, VGS = 10V, TJ = 175oC

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd

VDS = 15V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VGS = 0V to 1V

VDD = 15V ID = 35A Ig = 1.0mA

Switching Characteristics VGS = 10V

Turn-On Time
td ON

Turn-On Delay Time

Rise Time
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Datasheet ID: FDB8870-F085 514063