FDR840P

FDR840P Datasheet

FDR840P

Part	Datasheet
FDR840P	FDR840P (pdf)

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FDR840P December 2000 FDR840P P-Channel 2.5V Specified MOSFET This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Power management • Load switch • Battery protection • A, V. RDS ON = 12 VGS = V RDS ON = VGS = V • Fast switching speed. • High performance trench technology for extremely low RDS ON • High power and current handling capability SuperSOT -8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size FDR840P FDR840P 13’’ Ratings ± 12 to +150 70 20 Tape width 12mm Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDR840P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 12 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

PDF Datasheet Preview

FDR840P

December 2000

FDR840P

P-Channel 2.5V Specified MOSFET

This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Power management
• Load switch
• Battery protection
• A, V. RDS ON = 12 VGS = V RDS ON = VGS = V
• Fast switching speed.
• High performance trench technology for extremely low RDS ON
• High power and current handling capability

SuperSOT -8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDR840P

FDR840P
13’’

Ratings
± 12 to +150
70 20

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDR840P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = µA

ID = µA, Referenced to 25°C

VDS = V, VGS = 12 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

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Datasheet ID: FDR840P 514280